306 research outputs found
Observation of the Fractional Quantum Hall Effect in Graphene
When electrons are confined in two dimensions and subjected to strong
magnetic fields, the Coulomb interactions between them become dominant and can
lead to novel states of matter such as fractional quantum Hall liquids. In
these liquids electrons linked to magnetic flux quanta form complex composite
quasipartices, which are manifested in the quantization of the Hall
conductivity as rational fractions of the conductance quantum. The recent
experimental discovery of an anomalous integer quantum Hall effect in graphene
has opened up a new avenue in the study of correlated 2D electronic systems, in
which the interacting electron wavefunctions are those of massless chiral
fermions. However, due to the prevailing disorder, graphene has thus far
exhibited only weak signatures of correlated electron phenomena, despite
concerted experimental efforts and intense theoretical interest. Here, we
report the observation of the fractional quantum Hall effect in ultraclean
suspended graphene, supporting the existence of strongly correlated electron
states in the presence of a magnetic field. In addition, at low carrier density
graphene becomes an insulator with an energy gap tunable by magnetic field.
These newly discovered quantum states offer the opportunity to study a new
state of matter of strongly correlated Dirac fermions in the presence of large
magnetic fields
STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
Graphene has demonstrated great promise for future electronics technology as
well as fundamental physics applications because of its linear energy-momentum
dispersion relations which cross at the Dirac point. However, accessing the
physics of the low density region at the Dirac point has been difficult because
of the presence of disorder which leaves the graphene with local microscopic
electron and hole puddles, resulting in a finite density of carriers even at
the charge neutrality point. Efforts have been made to reduce the disorder by
suspending graphene, leading to fabrication challenges and delicate devices
which make local spectroscopic measurements difficult. Recently, it has been
shown that placing graphene on hexagonal boron nitride (hBN) yields improved
device performance. In this letter, we use scanning tunneling microscopy to
show that graphene conforms to hBN, as evidenced by the presence of Moire
patterns in the topographic images. However, contrary to recent predictions,
this conformation does not lead to a sizable band gap due to the misalignment
of the lattices. Moreover, local spectroscopy measurements demonstrate that the
electron-hole charge fluctuations are reduced by two orders of magnitude as
compared to those on silicon oxide. This leads to charge fluctuations which are
as small as in suspended graphene, opening up Dirac point physics to more
diverse experiments than are possible on freestanding devices.Comment: Nature Materials advance online publication 13/02/201
Higher Spins in AdS and Twistorial Holography
In this paper we simplify and extend previous work on three-point functions
in Vasiliev's higher spin gauge theory in AdS4. We work in a gauge in which the
space-time dependence of Vasiliev's master fields is gauged away completely,
leaving only the internal twistor-like variables. The correlation functions of
boundary operators can be easily computed in this gauge. We find complete
agreement of the tree level three point functions of higher spin currents in
Vasiliev's theory with the conjectured dual free O(N) vector theory.Comment: 23 pages. v3: minor errors fixed, added comments and reference
Coherent Electron-Phonon Coupling in Tailored Quantum Systems
The coupling between a two-level system and its environment leads to
decoherence. Within the context of coherent manipulation of electronic or
quasiparticle states in nanostructures, it is crucial to understand the sources
of decoherence. Here, we study the effect of electron-phonon coupling in a
graphene and an InAs nanowire double quantum dot. Our measurements reveal
oscillations of the double quantum dot current periodic in energy detuning
between the two levels. These periodic peaks are more pronounced in the
nanowire than in graphene, and disappear when the temperature is increased. We
attribute the oscillations to an interference effect between two alternative
inelastic decay paths involving acoustic phonons present in these materials.
This interpretation predicts the oscillations to wash out when temperature is
increased, as observed experimentally.Comment: 11 pages, 4 figure
Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout
The enormous stiffness and low density of graphene make it an ideal material
for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and
electrical readout of monolayer graphene resonators, and test their response to
changes in mass and temperature. The devices show resonances in the MHz range.
The strong dependence of the resonant frequency on applied gate voltage can be
fit to a membrane model, which yields the mass density and built-in strain.
Upon removal and addition of mass, we observe changes in both the density and
the strain, indicating that adsorbates impart tension to the graphene. Upon
cooling, the frequency increases; the shift rate can be used to measure the
unusual negative thermal expansion coefficient of graphene. The quality factor
increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing
many of the basic attributes of monolayer graphene resonators, these studies
lay the groundwork for applications, including high-sensitivity mass detectors
Quantum interference and Klein tunneling in graphene heterojunctions
The observation of quantum conductance oscillations in mesoscopic systems has
traditionally required the confinement of the carriers to a phase space of
reduced dimensionality. While electron optics such as lensing and focusing have
been demonstrated experimentally, building a collimated electron interferometer
in two unconfined dimensions has remained a challenge due to the difficulty of
creating electrostatic barriers that are sharp on the order of the electron
wavelength. Here, we report the observation of conductance oscillations in
extremely narrow graphene heterostructures where a resonant cavity is formed
between two electrostatically created bipolar junctions. Analysis of the
oscillations confirms that p-n junctions have a collimating effect on
ballistically transmitted carriers. The phase shift observed in the conductance
fringes at low magnetic fields is a signature of the perfect transmission of
carriers normally incident on the junctions and thus constitutes a direct
experimental observation of ``Klein Tunneling.''Comment: 13 pages and 6 figures including supplementary information. The paper
has been modified in light of new theoretical results available at
arXiv:0808.048
Broken symmetry states and divergent resistance in suspended bilayer graphene
Graphene [1] and its bilayer have generated tremendous excitement in the
physics community due to their unique electronic properties [2]. The intrinsic
physics of these materials, however, is partially masked by disorder, which can
arise from various sources such as ripples [3] or charged impurities [4].
Recent improvements in quality have been achieved by suspending graphene flakes
[5,6], yielding samples with very high mobilities and little charge
inhomogeneity. Here we report the fabrication of suspended bilayer graphene
devices with very little disorder. We observe fully developed quantized Hall
states at magnetic fields of 0.2 T, as well as broken symmetry states at
intermediate filling factors , , and . The
devices exhibit extremely high resistance in the state that grows
with magnetic field and scales as magnetic field divided by temperature. This
resistance is predominantly affected by the perpendicular component of the
applied field, indicating that the broken symmetry states arise from many-body
interactions.Comment: 23 pages, including 4 figures and supplementary information; accepted
to Nature Physic
Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
We investigate electronic transport in high mobility (\textgreater 100,000
cm/Vs) trilayer graphene devices on hexagonal boron nitride, which
enables the observation of Shubnikov-de Haas oscillations and an unconventional
quantum Hall effect. The massless and massive characters of the TLG subbands
lead to a set of Landau level crossings, whose magnetic field and filling
factor coordinates enable the direct determination of the
Slonczewski-Weiss-McClure (SWMcC) parameters used to describe the peculiar
electronic structure of trilayer graphene. Moreover, at high magnetic fields,
the degenerate crossing points split into manifolds indicating the existence of
broken-symmetry quantum Hall states.Comment: Supplementary Information at
http://jarilloherrero.mit.edu/wp-content/uploads/2011/04/Supplementary_Taychatanapat.pd
Multicomponent fractional quantum Hall effect in graphene
We report observation of the fractional quantum Hall effect (FQHE) in high
mobility multi-terminal graphene devices, fabricated on a single crystal boron
nitride substrate. We observe an unexpected hierarchy in the emergent FQHE
states that may be explained by strongly interacting composite Fermions with
full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured
from temperature dependent transport to be up 10 times larger than in any other
semiconductor system. The remarkable strength and unusual hierarcy of the FQHE
described here provides a unique opportunity to probe correlated behavior in
the presence of expanded quantum degrees of freedom.Comment: 5 pages, 3 figure
The nature of localization in graphene under quantum Hall conditions
Particle localization is an essential ingredient in quantum Hall physics
[1,2]. In conventional high mobility two-dimensional electron systems Coulomb
interactions were shown to compete with disorder and to play a central role in
particle localization [3]. Here we address the nature of localization in
graphene where the carrier mobility, quantifying the disorder, is two to four
orders of magnitude smaller [4,5,6,7,8,9,10]. We image the electronic density
of states and the localized state spectrum of a graphene flake in the quantum
Hall regime with a scanning single electron transistor [11]. Our microscopic
approach provides direct insight into the nature of localization. Surprisingly,
despite strong disorder, our findings indicate that localization in graphene is
not dominated by single particle physics, but rather by a competition between
the underlying disorder potential and the repulsive Coulomb interaction
responsible for screening.Comment: 18 pages, including 5 figure
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